Weak localization in electric-double-layer gated few-layer graphene
نویسندگان
چکیده
منابع مشابه
Weak localization in electric-double-layer gated few-layer graphene
We induce surface carrier densities up to ∼ ⋅ 7 1014 cm−2 in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4and 5-layer graphene below 20–30 K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab initio calculations we de...
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ژورنال
عنوان ژورنال: 2D Materials
سال: 2017
ISSN: 2053-1583
DOI: 10.1088/2053-1583/aa5afe